Home Hardware Tutorial Hardware News Sequential reads up to 26GB/s! Micron launches industry's first eco-friendly PCIe 6.0 data center SSD

Sequential reads up to 26GB/s! Micron launches industry's first eco-friendly PCIe 6.0 data center SSD

Aug 06, 2024 pm 06:56 PM
SSD Micron FMS2024

According to news from this website on August 6, Micron announced on the 5th local time in Santa Clara, California, the United States, that it successfully developed the industry’s first PCIe 6.0 data center solid-state drive for ecological support. The SSD has sequential read rates of up to 26GB/s.

The 9550 series PCIe 5.0 data center SSD released by Micron on July 23 has a 14GB/s sequential read rate. In other words, Micron’s new generation of products improved by 85.7% in sequential reading.

顺序读取可达 26GB/s!美光推出业界首款生态支持用 PCIe 6.0 数据中心固态硬盘

As one of the signs of launching the PCIe 6.0 ecosystem, Micron will showcase its new PCIe 6.0 data center solid-state drives at the FMS 2024 Summit to be held in Santa Clara from August 6th to 8th, local time.

In addition, Micron Senior Vice President Raj Narasimhan will announce at the summit at 11:00 am on August 7th, Pacific time (Note on this site: 02:00am on August 8th, Beijing time) The theme of the speech is "Data is the core of artificial intelligence: Micron memory and storage promote the artificial intelligence revolution".

The above is the detailed content of Sequential reads up to 26GB/s! Micron launches industry's first eco-friendly PCIe 6.0 data center SSD. For more information, please follow other related articles on the PHP Chinese website!

Statement of this Website
The content of this article is voluntarily contributed by netizens, and the copyright belongs to the original author. This site does not assume corresponding legal responsibility. If you find any content suspected of plagiarism or infringement, please contact admin@php.cn

Hot AI Tools

Undresser.AI Undress

Undresser.AI Undress

AI-powered app for creating realistic nude photos

AI Clothes Remover

AI Clothes Remover

Online AI tool for removing clothes from photos.

Undress AI Tool

Undress AI Tool

Undress images for free

Clothoff.io

Clothoff.io

AI clothes remover

Video Face Swap

Video Face Swap

Swap faces in any video effortlessly with our completely free AI face swap tool!

Hot Tools

Notepad++7.3.1

Notepad++7.3.1

Easy-to-use and free code editor

SublimeText3 Chinese version

SublimeText3 Chinese version

Chinese version, very easy to use

Zend Studio 13.0.1

Zend Studio 13.0.1

Powerful PHP integrated development environment

Dreamweaver CS6

Dreamweaver CS6

Visual web development tools

SublimeText3 Mac version

SublimeText3 Mac version

God-level code editing software (SublimeText3)

Samsung to launch PM1753 data center-grade SSD: 14.8 GB/s sequential read, 3.4 million IOPS random read Samsung to launch PM1753 data center-grade SSD: 14.8 GB/s sequential read, 3.4 million IOPS random read Aug 08, 2024 pm 04:40 PM

According to news from this site on August 8, Samsung demonstrated a variety of new SSD products at the 2024 Flash Memory Summit (FMS) - PM1753, BM1743, PM9D3a, PM9E1, and also tested the ninth generation QLCV-NAND, TLCV-NAND and CMM-D –DRAM, CMM-HTM, CMM-HPM, and CMM-BCXL technologies were introduced. BM1743 uses QLC flash memory with a capacity of up to 128TB, a continuous read speed of 7.5GB/s, a write speed of 3.5GB/s, a random read of 1.6 million IOPS, and a write of 45,000 IOPS. It adopts a 2.5-inch form factor and a U.2 interface, and is idle Power consumption is reduced to 4W, and after subsequent OTA updates, only

Industry's highest transfer rate of 3.6GB/s, Micron announces mass production of ninth-generation 276-layer TLC NAND flash memory Industry's highest transfer rate of 3.6GB/s, Micron announces mass production of ninth-generation 276-layer TLC NAND flash memory Jul 31, 2024 am 08:05 AM

According to news from this site on July 30, Micron announced today (local time) that its ninth generation (site note: 276 layers) 3DTLC NAND flash memory will be mass-produced and shipped. Micron said that its G9NAND has the industry's highest I/O transfer rate of 3.6GB/s (i.e. 3600MT/s flash memory interface rate), which is 50% higher than the existing competing products of 2400MT/s, and can better meet the needs of data-intensive workloads. High throughput requirements. At the same time, Micron's G9NAND is 99% and 88% higher than other solutions on the market in terms of write bandwidth and read bandwidth respectively. This NAND particle-level advantage will bring performance and energy efficiency to solid-state drives and embedded storage solutions. improvement. In addition, like previous generations of Micron NAND flash memory, Micron 276

Micron: HBM memory consumes 3 times the wafer volume, and production capacity is basically booked for next year Micron: HBM memory consumes 3 times the wafer volume, and production capacity is basically booked for next year Mar 22, 2024 pm 08:16 PM

This site reported on March 21 that Micron held a conference call after releasing its quarterly financial report. At the conference, Micron CEO Sanjay Mehrotra said that compared to traditional memory, HBM consumes significantly more wafers. Micron said that when producing the same capacity at the same node, the current most advanced HBM3E memory consumes three times more wafers than standard DDR5, and it is expected that as performance improves and packaging complexity intensifies, in the future HBM4 This ratio will further increase. Referring to previous reports on this site, this high ratio is partly due to HBM’s low yield rate. HBM memory is stacked with multi-layer DRAM memory TSV connections. A problem with one layer means that the entire

Esidak launches MB204MP-B four-bay M.2 solid-state drive box: supports PCIe 5.0, 2399 yuan Esidak launches MB204MP-B four-bay M.2 solid-state drive box: supports PCIe 5.0, 2399 yuan Jul 22, 2024 am 11:55 AM

This website reported on July 22 that ICEDOCK launched the ExpressSlotMB204MP-B four-bay M.2 solid-state drive extraction box on the 19th of this month. The extraction box adopts the shape of a PCIeAIC add-on card, requires PCIe6Pin auxiliary power supply, has a three-dimensional dimension of 204.5×21.59×126.9 (mm), supports the PCIe5.0 protocol, and can provide 16GB/s PCIe5.0×4 full-speed bandwidth for each solid-state drive. . Esidak ExpressSlotMB204MP-B SSD extraction box is compatible with M.22230/2242/2260/2280 SSDs. However, the thickness of each side of these SSDs must not exceed 1.5mm.

SK Hynix demonstrates Platinum P51 SSD: sequential read peak 13500 MB/s SK Hynix demonstrates Platinum P51 SSD: sequential read peak 13500 MB/s Mar 20, 2024 pm 02:36 PM

According to news from this website on March 20, SK Hynix recently attended the NVIDIA GTC2024 conference and demonstrated the first Gen5NVMe solid-state drive series for the consumer market-Platinum P51M.22280NVMeSSD. PlatinumP51 is similar to GoldP31 and PlatinumP41. It uses a self-designed SSD master control, but the main highlight is the use of PCIeGen5 and 238-layer TLCNAND flash memory. Note from this site: Hynix acquired SSD master control manufacturer LAMD in 2012, giving it the ability to design its own master control. SK Hynix said at the booth that Platinum P51 will be launched in 500GB, 1TB and 2

Phison comprehensively showcases Pascari enterprise-class SSD products, including 100DWPD ultra-high endurance model Phison comprehensively showcases Pascari enterprise-class SSD products, including 100DWPD ultra-high endurance model Aug 07, 2024 pm 06:58 PM

According to news from this site on August 7, Phison fully demonstrated its Pascari enterprise-class solid-state drive product line at the FMS2024 Summit. This product line covers 5 major categories and is targeted at various enterprise-level and data center applications. Here is a brief introduction on this site: X Series - Best Performance Phison's X Series enterprise-class SSDs are "designed for extreme writing requirements." In addition to the first X200 family, Phison also launched two PCIe 4.0 products, X100P and X100E, respectively 1DWPD and 3DWPD, with maximum capacities of 32TB Note 1. Both X100P and

Samsung introduces BM1743 data center-grade SSD: equipped with v7 QLC V-NAND and supports PCIe 5.0 Samsung introduces BM1743 data center-grade SSD: equipped with v7 QLC V-NAND and supports PCIe 5.0 Jun 18, 2024 pm 04:15 PM

According to news from this website on June 18, Samsung Semiconductor recently introduced its next-generation data center-grade solid-state drive BM1743 equipped with its latest QLC flash memory (v7) on its technology blog. ▲Samsung QLC data center-grade solid-state drive BM1743 According to TrendForce in April, in the field of QLC data center-grade solid-state drives, only Samsung and Solidigm, a subsidiary of SK Hynix, had passed the enterprise customer verification at that time. Compared with the previous generation v5QLCV-NAND (note on this site: Samsung v6V-NAND does not have QLC products), Samsung v7QLCV-NAND flash memory has almost doubled the number of stacking layers, and the storage density has also been greatly improved. At the same time, the smoothness of v7QLCV-NAND

It is reported that Kingston's new generation entry-level NVMe SSD NV3 will be launched in August It is reported that Kingston's new generation entry-level NVMe SSD NV3 will be launched in August Jul 17, 2024 pm 08:38 PM

According to news from this site on July 15, according to the WeChat public account ChannelGate, Kingston will launch a new generation of entry-level NVMe solid-state drive series NV3 in August. Kingston NV3 will still use the same PCIe4.0×4 specification as the existing product NV2. The sequential read speed will be increased to 6000MB/s, and the sequential write rate will also reach 5000MB/s, which is significantly higher than the 3500/2800MB/s of NV2. NV3 solid-state drives will cover four capacity points of 500GB, 1TB, 2TB, and 4TB, abandoning the 250GB version that appeared on NV2. This site noticed that the parameters of NV3 are similar to the KentingBay "KentingBay" previously displayed by Kingston at the 2024 Taipei International Computer Show.

See all articles